N'iji ya na semiconductor ike dabere na silicon, SiC (silicon carbide) semiconductor ike nwere uru dị ukwuu n'ịgbanwe ugboro ugboro, ọnwụ, mkpofu ọkụ, miniaturization, wdg.
Site na nnukwu mmepụta nke silicon carbide inverters site na Tesla, ụlọ ọrụ ndị ọzọ amalitela ịkwatu ngwaahịa silicon carbide.
SiC dị "ihe ịtụnanya", kedu ka e si mee ya? Kedu ihe bụ ngwa ugbu a? Ka ahụ!
01 ☆ Ọmụmụ SiC
Dị ka semiconductors ike ndị ọzọ, agbụ ụlọ ọrụ SiC-MOSFET gụnyereogologo kristal - mkpụrụ - epitaxy - imewe - nrụpụta - njikọ nkwakọ ngwaahịa.
Ogologo kristal
N'oge njikọ ogologo kristal, n'adịghị ka nkwadebe nke usoro Tira nke otu silicon kristal na-eji, silicon carbide na-agbaso usoro njem ụgbọ njem anụ ahụ (PVT, nke a makwaara dị ka usoro nkwalite Lly ma ọ bụ mkpụrụ kristal dị mma), usoro ntinye gas kemịkalụ dị elu ( HTCVD). ) mgbakwunye.
☆ Isi nzọụkwụ
1. Carbonic siri ike akụrụngwa;
2. Mgbe kpochara, carbide siri ike na-aghọ gas;
3. Gas na-aga n'elu kristal mkpụrụ;
4. Gas na-etolite n'elu kristal mkpụrụ n'ime kristal.
Isi mmalite foto: "Nka na ụzụ iji kwatuo PVT uto silicon carbide"
Ọzụzụ dị iche iche ebutela nnukwu ọghọm abụọ ma e jiri ya tụnyere ntọala silicon:
Nke mbụ, mmepụta siri ike ma mkpụrụ ya dị ala.Okpomọkụ nke ikuku gas sitere na carbon na-eto n'elu 2300 Celsius C na nrụgide bụ 350MPa. A na-eme igbe gbara ọchịchịrị dum, ọ dịkwa mfe ịgwakọta n'ime adịghị ọcha. Mkpụrụ ahụ dị ala karịa ntọala silicon. Ka dayameta buru ibu, na-ebelata mkpụrụ.
Nke abụọ bụ uto nwayọọ nwayọọ.Ọchịchị nke usoro PVT dị ngwa ngwa, ọsọ dị ihe dịka 0.3-0.5mm / h, ọ nwere ike itolite 2cm n'ime ụbọchị 7. Nke kachasị nwere ike itolite naanị 3-5cm, na dayameta nke ingot kristal na-abụkarị inch 4 na sentimita 6.
72H dabeere na Silicon nwere ike itolite na elu 2-3m, na dayameta nke ukwuu 6 sentimita asatọ na 8-inch ọhụrụ mmepụta ikike maka 12 sentimita asatọ.Ya mere, a na-akpọkarị silicon carbide crystal ingot, na silicon na-aghọ osisi kristal.
Carbide silicon crystal ingots
Mkpụrụ
Mgbe ogologo kristal gwụchara, ọ na-abanye n'usoro mmepụta nke mkpụrụ.
Mgbe e gbuchara ezubere iche, egweri (igwe ọka siri ike, ịhịa aka nke ọma), polishing (imechanical polishing), ultra-precision polishing (chemical mechanical polishing), a na-enweta mkpụrụ silicon carbide.
The mkpụrụ tumadi na-arụọrụ nke nkwado anụ ahụ, conductivity thermal na conductivity.Ihe isi ike nke nhazi bụ na silicon carbide ihe dị elu, crispy, na kwụsiri ike na chemical Njirimara. Ya mere, usoro nhazi nke dabeere na silicon omenala adịghị adabara maka mkpụrụ osisi silicon carbide.
Ogo nke mmetụta ịkpụ na-emetụta kpọmkwem arụmọrụ na itinye n'ọrụ (ọnụahịa) nke ngwaahịa silicon carbide, ya mere a chọrọ ka ọ bụrụ obere, nha nha, na obere ịkpụ.
Ugbu a,4-inch na 6-inch na-ejikarị akụrụngwa ịkpụ ahịrị ọtụtụ,na-egbutu kristal silicon n'ime mpekere dị gịrịgịrị na ọkpụrụkpụ nke na-erughị 1mm.
Eserese nke ịkpụcha ọtụtụ ahịrị
N'ọdịnihu, na-abawanye na size nke carbonized silicon wafer, ịrị elu nke iji ihe onwunwe chọrọ ga-amụba, na teknụzụ dị ka laser slicing na oyi nkewa ga-eji nwayọọ nwayọọ na-etinye.
N'afọ 2018, Infineon nwetara Siltectra GmbH, bụ nke mepụtara usoro ọhụrụ a maara dị ka mgbawa oyi.
Tụnyere usoro igbuchapụ waya ọtụtụ waya ọdịnala na-efu nke 1/4,usoro mgbawa oyi na-atụfu naanị 1/8 nke ihe silicon carbide.
Mgbatị
Ebe ọ bụ na ihe silicon carbide enweghị ike ịme ngwaọrụ ike ozugbo na mkpụrụ, a na-achọ ngwaọrụ dị iche iche na oyi akwa ndọtị.
Ya mere, mgbe emechara mmepụta nke mkpụrụ osisi ahụ, a na-emepụta otu ihe nkiri kristal kpọmkwem na mkpụrụ ahụ site na usoro mgbatị ahụ.
Ka ọ dị ugbu a, a na-ejikarị usoro ntinye gas nke kemịkal (CVD) eme ihe.
Nhazi
Mgbe emechara mkpụrụ osisi ahụ, ọ na-abanye n'ụdị nhazi ngwaahịa.
Maka MOSFET, ihe a na-elekwasị anya na usoro nhazi bụ imewe nke uzo,n'otu aka iji zere mmebi iwu patent(Infineon, Rohm, ST, wdg, nwere patent okirikiri nhọrọ ukwuu), na n'aka nke ọzọ kazute nrụpụta nrụpụta na ọnụ ahịa nrụpụta.
Ịmepụta wafer
Mgbe emechara nhazi ngwaahịa ahụ, ọ na-abanye na ọkwa nrụpụta wafer,na usoro bụ roughly yiri nke silicon, nke tumadi nwere ndị a 5 nzọụkwụ.
☆ Nzọụkwụ 1: Tinye ihe mkpuchi ahụ
A na-eme ihe nkiri sịlịkọn oxide (SiO2), a na-ekpuchi fotoresist, a na-emepụta ụkpụrụ nke photoresist site na nzọụkwụ nke homogenization, ikpughe, mmepe, wdg, na-ebufe ọnụ ọgụgụ ahụ na ihe nkiri oxide site na usoro etching.
☆ Nzọụkwụ 2: Ịkụnye ion
A na-etinye wafer silicon carbide masked n'ime ihe ntinye ion, ebe a na-agbanye ion aluminom ka ọ bụrụ mpaghara doping ụdị P, ma gbanye ya ka ọ rụọ ọrụ ion aluminum etinyere.
A na-ewepụ ihe nkiri oxide ahụ, a na-agbanye ion nitrogen n'ime mpaghara kpọmkwem nke mpaghara P-ụdị doping iji mepụta mpaghara N-ụdị nchịkwa nke drain na isi iyi, na ion nitrogen etinyere na-agbanye ka ha rụọ ọrụ.
☆ Nzọụkwụ 3: Mepụta grid
Mee grid. N'ebe dị n'etiti isi iyi na igbapu, a na-akwadebe oyi akwa oxide ọnụ ụzọ site na usoro oxidation dị elu, a na-echekwa oghere electrode ọnụ ụzọ ámá iji mepụta nhazi njikwa ọnụ ụzọ.
☆ Nzọụkwụ 4: Ime passivation layers
A na-eme oyi akwa ngafe. Debe oyi akwa passivation nwere ezigbo mkpuchi mkpuchi iji gbochie ndakpọ interelectrode.
☆ Nzọụkwụ 5: Mepụta electrodes-isi iyi
Mee igbapu na isi iyi. A na-agbaji oyi akwa passivation na ígwè na-efesa ka ọ bụrụ mmiri na-esi na mmiri.
Isi mmalite foto: Xinxi Capital
Ọ bụ ezie na e nwere ntakịrị ihe dị iche n'etiti usoro usoro na silicon dabeere, n'ihi àgwà nke silicon carbide ihe.Ekwesịrị ime ntinye na ntinye ion na ọnọdụ okpomọkụ dị elu(ruo 1600 Celsius C), okpomọkụ dị elu ga-emetụta nhazi nke ihe ahụ n'onwe ya, na ihe isi ike ga-emetụtakwa mkpụrụ.
Na mgbakwunye, maka MOSFET components,àgwà nke ọnụ ụzọ ámá oxygen ozugbo na-emetụta ọwa ngagharị na ntụkwasị obi ọnụ ụzọ ámá, n'ihi na e nwere ụdị abụọ nke silicon na carbon atom na silicon carbide ihe.
Ya mere, a pụrụ iche ụzọ ámá uto usoro a chọrọ (ihe ọzọ bụ na silicon carbide mpempe akwụkwọ bụ transperent, na ọnọdụ alignment na photolithography ogbo siri ike silicon).
Mgbe arụchara wafer ahụ, a na-egbutu mgbawa nke ọ bụla n'ime mgbawa na-enweghị isi ma nwee ike ịchịkọta ya dịka ebumnuche ya si dị. Usoro a na-ahụkarị maka ngwaọrụ pụrụ iche bụ ngwugwu.
650V CoolSiC™ MOSFET dị na ngwugwu TO-247
Foto: Infineon
Ụgbọ ala ubi nwere ike dị elu na okpomọkụ dissipation chọrọ, na mgbe ụfọdụ, ọ dị mkpa ka kpọmkwem wuo àkwà mmiri sekit (ọkara akwa ma ọ bụ zuru àkwà mmiri, ma ọ bụ ozugbo packaged na diodes).
Ya mere, a na-etinyekarị ya ozugbo na modul ma ọ bụ sistemu. Dị ka ọnụ ọgụgụ nke ibe ngwungwu na otu modul, ụdị nkịtị bụ 1 na 1 (BorgWarner), 6 na 1 (Infineon), wdg, na ụfọdụ ụlọ ọrụ na-eji otu-tube yiri atụmatụ.
Borgwarner Viper
Na-akwado nju oyi nwere akụkụ abụọ na SiC-MOSFET
Infineon CoolSiC™ MOSFET modul
N'adịghị ka silicon,Modul silicon carbide na-arụ ọrụ na okpomọkụ dị elu, ihe dịka 200 Celsius.
Omenala rọrọ solder okpomọkụ agbaze ebe okpomọkụ dị ala, enweghị ike izute okpomọkụ chọrọ. Ya mere, modul silicon carbide na-ejikarị usoro ịgbado ọkụ ọla ọcha dị ala.
Mgbe emechara modul ahụ, enwere ike itinye ya na usoro akụkụ.
Tesla Model3 njikwa moto
Ihe mgbawa ahụ efu na-abịa site na ST, ngwugwu nke mebere onwe ya na sistemụ eletriki eletrik
☆02 Ọkwa ngwa nke SiC?
N'ime ụgbọ ala, a na-ejikarị ngwaọrụ ọkụ eme iheDCDC, OBC, moto inverters, eletriki ikuku oyi inverters, ikuku chaja na akụkụ ndị ọzọnke na-achọ mgbanwe ngwa ngwa AC/DC (DCDC na-emekarị dị ka mgba ọkụ ngwa ngwa).
Foto: BorgWarner
E jiri ya tụnyere ihe ndị dabeere na silicon, ihe SIC nwere eluike oke oke oke oke oke nbibi(3 × 106V / cm),mma thermal conductivity(49W/mK) nawide band ọdịiche(3.26eV).
Ka ọdịiche nke band ahụ na-abawanye, nke nta nke ntanye nke ugbu a ma na-arụ ọrụ nke ọma. Nke ka mma nke thermal conductivity, nke dị elu ugbu a njupụta. Ka ihe na-esiwanye ike na mpaghara mmebi oke oke oke, enwere ike imeziwanye nguzogide voltaji nke ngwaọrụ ahụ.
Ya mere, n'ọhịa nke on-board high voltaji, MOSFETs na SBD nke silicon carbide ihe kwadebere iji dochie silicon dabeere IGBT na FRD Nchikota dị ugbu a nwere ike imeziwanye ike na arụmọrụ nke ọma,karịsịa na elu ugboro ngwa ndapụta iji belata ịgbanwee ọnwụ.
Ugbu a, o yikarịrị ka ọ ga-enweta nnukwu ngwa n'ime igwe inverters, OBC na DCDC sochiri ya.
800V voltaji n'elu ikpo okwu
N'elu ikpo okwu voltaji 800V, uru nke ugboro ugboro na-eme ka ụlọ ọrụ nwee mmasị ịhọrọ ngwọta SiC-MOSFET. Yabụ, ọtụtụ n'ime atụmatụ njikwa eletrọnịkị 800V dị ugbu a SiC-MOSFET.
Atụmatụ ọkwa ọkwa gụnyereE-GMP ọgbara ọhụrụ, GM Otenergy - ubi nchịkọta, Porsche PPE, na Tesla EPA.Ewezuga ụdị ikpo okwu Porsche PPE nke na-anaghị ebu SiC-MOSFET n'ụzọ doro anya (ihe nlereanya mbụ bụ IGBT dabere na silica), nyiwe ụgbọ ala ndị ọzọ na-agbaso atụmatụ SiC-MOSFET.
Universal Ultra ike ikpo okwu
800V nlereanya atụmatụ bụ ihe ọzọ,The Great Wall Salon ika Jiagirong, Beiqi pole Fox S HI ụdị, ezigbo ụgbọ ala S01 na W01, Xiaopeng G9, BMW NK1, Changan Avita E11 kwuru na ọ ga-ebu 800V n'elu ikpo okwu, na mgbakwunye na BYD, Laantu, GAC 'an, Mercedes-Benz, efu Run, FAW Red Flag, Volkswagen kwukwara 800V technology na nnyocha.
Site na ọnọdụ nke iwu 800V nke ndị na-eweta Tier1 nwetara,BorgWarner, Wipai Technology, ZF, United Electronics, na Huichuanniile mara ọkwa iwu mbanye eletriki 800V.
400V voltaji n'elu ikpo okwu
Na 400V voltaji n'elu ikpo okwu, SiC-MOSFET bụ tumadi na echiche nke elu ike na ike njupụta na elu arụmọrụ.
Dị ka Tesla Model 3Y moto nke arụpụtarala ọtụtụ ugbu a, ike kacha elu nke BYD Hanhou moto bụ ihe dịka 200Kw (Tesla 202Kw, 194Kw, 220Kw, BYD 180Kw), NIO ga-ejikwa ngwaahịa SiC-MOSFET malite na ET7. yana ET5 nke a ga-edepụta ma emechaa. Ike kacha elu bụ 240Kw (ET5 210Kw).
Na mgbakwunye, site n'echiche nke arụmọrụ dị elu, ụfọdụ ụlọ ọrụ na-enyochakwa ike nke ngwaahịa idei mmiri inyeaka SiC-MOSFET.
Oge nzipu: Jul-08-2023
